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| inchange semiconductor product specification silicon npn power transistors 2SD849 description ? ? with to-3 package ? high voltage ,high speed applications ? line-operated horizontal deflection output applications pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 600 v v ebo emitter-base voltage open collector 5 v i c collector current 3 a i cm collector current-peak 5 a p t total power dissipation t c =90 ?? 25 w t j junction temperature 150 ?? t stg storage temperature -65~150 ?? fig.1 simplified outline (to-3) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SD849 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.1a; i b =0 600 v v (br)ebo emitter-base breakdown votage i e =10ma; i c =0 5 v v cesat collector-emitter saturation voltage i c =3 a;i b =1a 5.0 v v besat base-emitter saturation voltage i c =3 a;i b =1a 1.5 v v cb =750v;i e =0 0.1 i cbo collector cut-off current v cb =1500v;i e =0 1.0 ma h fe-1 dc current gain i c =0.5a ; v ce =5v 8 h fe-2 dc current gain i c =3a ; v ce =10v 4 12 t f fall time 0.9 | s t s storage time i c =3 a;i b end =1a;l b =20 | h 13 | s inchange semiconductor product specification 3 silicon npn power transistors 2SD849 package outline fig.2 outline dimensions |
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